IR1175 Datasheet | International Rectifier

Features n Provides constant and proper gate drive to power MOSFETs regardless of transformer output n Minimizes loss due to power MOSFET body drain diode conduction n Stand alone operation - no ties to primary side n Schmitt trigger input with double pulse suppression allows operation in noisy environments n High current drive capability - 2A n High speed operation - 2MHz n Adaptable to multiple topologies (such as singleended forward, double-ended forward) Product Summary Vdd IO+/Fmax Max lead time 5Vdc 2A/2A 2MHz 500nsec Description The IR1175 is a high speed CMOS controller designed to drive N-channel power MOSFETs used as synchronous rectifiers in high current, high frequency forward converters with output voltages equal or below 5VDC. Schmitt trigger inputs with double pulse suppression allow the controller to operate in noisy environments. The circuit does not require any ties to the primary side and derives its operating power directly from the secondary. The circuit functions by anticipating transformer output transitions, then turns the power MOSFETs on or off before the transitions of the transformer to minimize body drain diode conduction and reduce associated losses. Turn on/off lead time can be adjusted to acmodate a variety of power MOSFET sizes and circuit conditions. The IR1175 also provides gate drive overlap/dead-time control via external ponents to further minimize diode conduction by nulling effects of secondary loop and device package inductance. Package 20 Lead Surface Mount (SSOP-20) ADVANCE INFORMATION Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. Symbol Vdd Iin PD Rth JC Rth JA TJ TS TL Definition Supply voltage Input clamp current Power dissipation (SSOP-20) Thermal resistance (SSOP-20) junction-to-case Thermal resistance (SSOP-20) junction-to-ambient Junction temperature Storage temperature Lead temperature (soldering, 10 seconds) Min. - - - - - -...