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International Rectifier Electronic Components Datasheet

IR20153S Datasheet

HIGH SIDE DRIVER WITH RECHARGE

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Preliminary Data Sheet PD60214 Rev B
IR20153S & (PbF)
HIGH SIDE DRIVER WITH RECHARGE
Features
Product Summary
Floating channel designed for bootstrap operation
Fully operational up to 150V
VOFFSET
150V max.
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 5V to 20V
Undervoltage lockout
Internal recharge FET for bootstrap refresh
Internal deadtime of 11µs and 0.8µs
CMOS Schmitt-triggered input logic
Output out of phase with input
Reset input
Split pull-up and pull-down gate drive pins
Also available LEAD-FREE (PbF)
IO+/-
VOUT
ton/off
400mA @ VBS=7V,
1.5A @ VBS=16V
5-20V
1.0 and 0.3 µs
Description
Package
The IR20153S is a high voltage, high speed power MOSFET driver . Proprietary HVIC
and latch immune CMOS technologies enable ruggedized monolithic construction. The
logic input is compatible with standard CMOS output down to 3.3V. The output driver
features a high pulse current buffer stage designed for minimum cross-conduction. The
floating channel can be used to drive an N-channel power MOSFET in the high or low
side configuration which operates up to 150 volts.
8-Lead SOIC
Typical Connection
up to 150V
VCC
IN
RESET
(Refer to Lead Assignments
for correct configuration).
This/These diagram(s) show
electrical connections only.
Please refer to our Applica-
tion Notes and DesignTips
for proper circuit board lay-
out.
www.irf.com
VCC
IN
GND
RESET
VB
HOH
HOL
VS
Load
1


International Rectifier Electronic Components Datasheet

IR20153S Datasheet

HIGH SIDE DRIVER WITH RECHARGE

No Preview Available !

IR20153S & (PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to GND, all currents are defined positive into any lead. This is a stress only rating
and operation of the device at these or any conditions exceeding those indicated in the operational sections of this
specifications is not implied.
Symbol
VB
VS
VHO
VCC
VIN
dV/dt
TJ
TS
TL
Definition
High side driver output stage voltage
High side floating supply offset voltage
Output voltage gate high connection
Low side fixed supply voltage
Input voltage (IN and RESET)
Allowable offset voltage slew rate
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
Min.
-5.0
- 8.0
VS - 0.3
-0.3
-55
-55
Max.
170
150
VB + 0.3
25
-0.3
50
150
150
300
Units
V
VCC +0.3
V/nsec
°C
Recommended Operating Conditions
The input/output logic timing diagram is shown in Fig. 2. For proper operation the device should be used within the
recommended conditions. All voltage parameters are absolute voltages referenced to GND. The VS offset rating is tested
with all suppliers biased at Vcc=5V and VBS=7V.
Symbol
Definition
Min.
Max. Units
VB
VS
VHO
VCC
VIN
TA
High side driver output stage voltage
High side floating supply offset voltage
Output voltage gate high connection
Supply voltage
Input voltage (IN and RESET)
Ambient temperature
VS + 5
-1.6
VS
5
0
-55
VS + 20
150
VB
20
Vcc
150
V
°C
2 www.irf.com


Part Number IR20153S
Description HIGH SIDE DRIVER WITH RECHARGE
Maker International Rectifier
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IR20153S Datasheet PDF






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