IR2101SPBF Datasheet | International Rectifier

Data Sheet No. PD60043 Rev.O IR2101(S)/IR2102(S) &(Pb F) HIGH AND LOW SIDE DRIVER Features - Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage d V/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout 3.3V, 5V, and 15V logic input patible Matched propagation delay for both channels Outputs in phase with inputs (IR2101) or out of phase with inputs (IR2102) Also available LEAD-FREE Product Summary VOFFSET IO+/VOUT ton/off (typ.) Delay Matching 600V max. 130 m A / 270 m A 10 - 20V 160 & 150 ns 50 ns - - - - - - Packages Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Pro8-Lead SOIC 8-Lead PDIP prietary HVIC and latch immune CMOS technologies IR2101S/IR2102S IR2101/IR2102 enable ruggedized monolithic construction. The logic input is patible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Typical Connection up to 600V VCC HIN LIN VB HO VS LO TO LOAD HIN LIN IR2101 VCC up to 600V VB HO VS LO TO LOAD HIN LIN (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and Design Tips for proper circuit board layout. IR2102 .irf. Free Datasheet http://.. IR2101(S)/IR2102(S) & (Pb...