IR2109 Overview
The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is patible with standard CMOS or LSTTL output, down to 3.3V logic.
IR2109 Key Features
- Floating channel designed for bootstrap operation
- Gate drive supply range from 10 to 20V
- Undervoltage lockout for both channels
- 3.3V, 5V and 15V input logic patible
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- High side output in phase with IN input
- Logic and power ground +/- 5V offset
- Internal 540ns dead-time, and programmable
- Lower di/dt gate driver for better noise immunity