IR21814S Datasheet | International Rectifier

Features - Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage d V/dt immune - Gate drive supply range from 10 to 20V - Undervoltage lockout for both channels - 3.3V and 5V input logic patible - Matched propagation delay for both channels - Logic and power ground +/- 5V offset. - Lower di/dt gate driver for better noise immunity - Output source/sink current capability 1.4A/1.8A - Also available LEAD-FREE (Pb F) Packages 8-Lead PDIP IR2181 8-Lead SOIC IR2181S 14-Lead PDIP IR21814 14-Lead SOIC IR21814S IR2181/IR2183/IR2184 Feature parison Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge- Part 2181 21814 2183 21834 2184 21844 Input logic HIN/LIN HIN/LIN IN/SD Crossconduction prevention logic no yes yes Dead-Time Ground Pins none Internal 500ns Program 0.4 ~ 5 us Internal 500ns Program 0.4 ~ 5 us VSS/ VSS/ VSS/ Ton/Toff 180/220 ns 180/220 ns 680/270 ns dized monolithic construction. The logic input is patible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross- conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Typical Connection V...