IR2302S Datasheet | International Rectifier

Features Packages - Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage d V/dt immune - Gate drive supply range from 5 to 20V - Undervoltage lockout for both channels - 3.3V, 5V and 15V input logic patible - Cross-conduction prevention logic - Matched propagation delay for both channels - High side output in phase with IN input - Logic and power ground +/- 5V offset. - Internal 540ns dead-time - Lower di/dt gate driver for better noise immunity - Shut down input turns off both channels - 8-Lead SOIC also available LEAD-FREE (Pb F). Description The IR2302(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output 8-Lead SOIC IR2302(S) (Also available LEAD-FREE (Pb F)) 8-Lead PDIP IR2302 2106/2301//2108//2109/2302/2304 Feature parison Part Input logic 2106/2301 21064 2108 21084 2109/2302 21094 HIN/LIN HIN/LIN IN/SD HIN/LIN Crossconduction prevention logic no yes yes yes Dead-Time none Internal 540ns Programmable 0.54~5 µs Internal 540ns Programmable 0.54~5 µs Internal 100ns Ground Pins VSS/ VSS/ VSS/ channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is patible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Typical Connection up to...