IR2304S Datasheet Text
Data Sheet No. PD60200 revB
IR2304(S) & (PbF)
Features
- Floating channel designed for bootstrap operation to +600V. Tolerant to negative transient voltage dV/dt immune
- Gate drive supply range from 10 to 20V
- Under voltage lockout for both channels
- 3.3V, 5V, and 15V input logic input patible
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- Lower di/dt gate driver for better noise immunity
- Internal 100ns dead-time
- Output in phase with input
- Available in Lead-Free
HALF-BRIDGE DRIVER
Product Summary
VOFFSET IO+/- (min)
VOUT Delay Matching Internal deadtime ton/off (typ.)
Package
600V max. 60 mA/130 mA
10
- 20V 50 ns 100 ns
220/220 ns
Description
The IR2304(S) are a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is patible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver Features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
8-Lead PDIP
8 Lead SOIC
2106/2301/2108/2109/2302/2304 Feature parison
Part
Input logic
2106/2301 21064 2108 21084...