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Bulletin I0114J 05/00
IR340LM..CS05CB SERIES
FAST RECOVERY DIODES
Junction Size: Wafer Size: VRRM Class: Passivation Process: Reference IR Packaged Part:
Rectangular 350 x 230 mils 4" 1000 to 1200 V Glassivated MOAT 60EPF Series
Major Ratings and Characteristics
Parameters
VFM V RRM Maximum Forward Voltage Reverse Breakdown Voltage Range
Units
1300 mV
(1) Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness
Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment
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1000 to 1200 V TJ = 25°C, I RRM = 100 µA
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Test Conditions
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IR340LM Datasheet
