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International Rectifier Electronic Components Datasheet

IR340LM Datasheet

Fast Recovery Diodes

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Bulletin I0114J 05/00
IR340LM..CS05CB SERIES
Junction Size:
Rectangular 350 x 230 mils
mWafer Size:
4"
oVRRM Class:
.cPassivation Process:
1000 to 1200 V
Glassivated MOAT
Reference IR Packaged Part: 60EPF Series
t4UMajor Ratings and Characteristics
eParameters
Units Test Conditions
eVFM Maximum Forward Voltage
1300 mV TJ = 25°C, IF = 60 A
hVRRM Reverse Breakdown Voltage Range
(1) Nitrogen flow on die edge.
1000 to 1200 V TJ = 25°C, IRRM = 100 µA
(1)
taSMechanical Characteristics
Nominal Back Metal Composition, Thickness
aNominal Front Metal Composition, Thickness
.DChip Dimensions
Wafer Diameter
wWafer Thickness
Maximum Width of Sawing Line
wwReject Ink Dot Size
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
100% Al, (20 µm)
350 x 230 mils (8.89x5.84 mm) - see drawing
100 mm, with std. < 110 > flat
260 µm
45 µm
0.25 mm diameter minimum
Ink Dot Location
Recommended Storage Environment
www.irf.com
See drawing
mStorage in original container, in dessicated
onitrogen, with no contamination
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International Rectifier Electronic Components Datasheet

IR340LM Datasheet

Fast Recovery Diodes

No Preview Available !

IR340LM..CS05CB Series
Bulletin I0114J 05/00
Ordering Information Table
Device Code
IR 340 L M 12 C S05 CB
1 2 34 5 6 7
1 - International Rectifier Device
2 - Chip Dimension in Mils
3 - Type of Device: L = Wire Bondable Fast Recovery Diode
4 - Passivation Process: M = Glassivated MOAT
5 - Voltage code: Code x 100 = VRRM
6 - Metallization: C = Aluminium (Anode) - Silver (Cathode)
7 - Trr code: S05 = 500 nsec
8 - CB = Probed Uncut Die (wafer in box)
None = Probed Die in chip carrier
Available Class
10 = 1000 V
12 = 1200 V
8
Outline Table
All dimensions are in millimeters (mils)
2 www.irf.com


Part Number IR340LM
Description Fast Recovery Diodes
Maker International Rectifier
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IR340LM Datasheet PDF






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