IR51HD214 half-bridge equivalent, self-oscillating half-bridge.
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Product Summary
VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 250V 50% 1.2µs 2.0Ω 2.0W
Output Power MOSFETs in half-bridge configuration 250V Rat.
The device can operate up to 250 volts.
Package
IR51HD214 9506
Typical Connection
U P TO 250V D C B U S V IN
IR 5 1.
The IR51HD214 is a high voltage, high speed, selfoscillating half-bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The front-end features a pro.
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