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IR6311G - INTELLIGENT HIGH SIDE MOSFET POWER SWITCH

General Description

The IR6311G is a monolithic HIGH SIDE SWITCH with built in short circuit, over- temperature, ESD, inductive load turn off capability and diagnostic feedback.

The on-chip protection circuit goes into PWM mode, limiting the average current during short circuit if the drain current exceeds 5A.

Key Features

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  • PWM Current Limit for Short Circuit Protection Over-Temperature Protection Active Output Negative Clamp Reverse Battery Protection for Logic Circuit Broken Ground Protection Short to VCC Protection Low Noise Charge Pump Sleep Mode Supply Current 4kV ESD Protection On All Pins Logic Ground Isolated From Power Ground Vcc(op) Rds(on) Ilim Tj(sd) Eav.

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Full PDF Text Transcription for IR6311G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IR6311G. For precise diagrams, and layout, please refer to the original PDF.

Data Sheet 6.124-G IR6311G INTELLIGENT HIGH SIDE MOSFET POWER SWITCH Features www.DataSheet4U.com • • • • • • • • • • PWM Current Limit for Short Circuit Protection Over-...

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• • • • • • • • • PWM Current Limit for Short Circuit Protection Over-Temperature Protection Active Output Negative Clamp Reverse Battery Protection for Logic Circuit Broken Ground Protection Short to VCC Protection Low Noise Charge Pump Sleep Mode Supply Current 4kV ESD Protection On All Pins Logic Ground Isolated From Power Ground Vcc(op) Rds(on) Ilim Tj(sd) Eav Applications 5v-50v 150mΩ 5A 170oC 100mJ General Description The IR6311G is a monolithic HIGH SIDE SWITCH with built in short circuit, over- temperature, ESD, inductive load turn off capability and diagnostic feedback.