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IRF1104S - (IRF1104L/S) HEXFET Power MOSFET

Download the IRF1104S datasheet PDF. This datasheet also covers the IRF1104L variant, as both devices belong to the same (irf1104l/s) hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • D. U. T. - Device Under Test + V DD DataSheet4U. com Driver Gate Drive P. W. Period D= P. W. Period VGS=10V.
  • D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD DataSheet4U. com.
  • VGS = 5V for Logic Level Devices Fig 14. For N-Channel.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF1104L_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF1104 N-Channel MOSFET INCHANGE
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IRF100B201 N-Channel MOSFET INCHANGE
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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF1104SPBF (IRF1104S/LPBF) HEXFET Power MOSFET
IRF1104 Power MOSFET
IRF1104L (IRF1104L/S) HEXFET Power MOSFET
IRF1104LPBF (IRF1104S/LPBF) HEXFET Power MOSFET
IRF100B201 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD -91845 IRF1104S/L HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS(on) = 0.009Ω G ID = 100A… S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
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