IRF1104S Datasheet - International Rectifier

(IRF1104L/S) HEXFET Power MOSFET

IRF1104S Features

* D.U.T. - Device Under Test + V DD DataSheet4U.com Driver Gate Drive P.W. Period D= P.W. Period VGS=10V

* D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop

IRF1104S General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRF1104S Datasheet (361.78 KB)

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Datasheet Details

Part number:

IRF1104S

Manufacturer:

International Rectifier

File Size:

361.78 KB

Description:

(irf1104l/s) hexfet power mosfet.
www.DataSheet4U.com PD -91845 IRF1104S/L HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount (IRF1.

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IRF1104S IRF1104L HEXFET Power MOSFET International Rectifier

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IRF1104S Features

IRF1104S General Description

Datasheet Details

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