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IRF1104SPBF - (IRF1104S/LPBF) HEXFET Power MOSFET

Download the IRF1104SPBF datasheet PDF. This datasheet also covers the IRF1104LPBF variant, as both devices belong to the same (irf1104s/lpbf) hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • y Duty Factor "D" D. U. T. - Device Under Test + V DD et4U. com DataShee DataSheet4U. com Driver Gate Drive P. W. Period D= P. W. Period VGS=10V.
  • D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD.
  • VGS = 5V for Logic Level Devices Fig 14. For N-Channel.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF1104LPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRF1104 N-Channel MOSFET INCHANGE
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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF1104S (IRF1104L/S) HEXFET Power MOSFET
IRF1104 Power MOSFET
IRF1104L (IRF1104L/S) HEXFET Power MOSFET
IRF1104LPBF (IRF1104S/LPBF) HEXFET Power MOSFET
IRF100B201 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 95526 IRF1104S/LPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 0.009Ω G S ID = 100A… Description Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
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