IRF1404SPbF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l.

Datasheet Details

Part number	IRF1404SPbF
Manufacturer	International Rectifier (now Infineon)
File Size	263.58 KB
Description	Power MOSFET
Datasheet	IRF1404SPbF-InternationalRectifier.pdf

General Description

Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

G PD -95104 IRF1404SPbF IRF1404LPbF HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 0.004Ω S ID = 162A The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.

Key Features

ard Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop VDD Ripple ≤ 5% ISD www. irf. com.
VGS = 5V for Logic Level Devices Fig 14. For N-channel HEXFET® Power MOSFETs 7 IRF1404S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 30 S W IT H L OT CODE 8024 AS S E MB LE D ON WW 02, 2000 IN T H E AS S E M B L Y L IN E "L " IN T E R N.

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