of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this.

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* IRF1405PbF HEXFET® Power MOSFET D Electric Pow.

TO-220AB Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Dera.

IRF1405

IRF1405L

IRF1405LPbF

IRF1405S

IRF1405SPbF

IRF1405Z

IRF1405ZL

IRF1405ZL-7P

IRF1405ZLPbF

IRF1405ZPbF

IRF1405ZS

IRF1405ZS-7P

IRF1405ZSPbF