Download the IRF1405ZS datasheet PDF.
This datasheet also covers the IRF1405Z variant, as both devices belong to the same automotive mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 55V
G S
RDS(on) = 4.9mΩ ID = 75A.
Note: The manufacturer provides a single datasheet file (IRF1405Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IRF1405ZS (Reference)
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IRF1405ZS. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PD - 94645A AUTOMOTIVE MOSFET IRF1405Z IRF1405ZS IRF1405ZL HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resistan...
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D Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Autom
IRF1405ZS Datasheet
