IRF2204 Overview
Key Specifications
Package: TO-220AB
Mount Type: Through Hole
Pins: 3
Height: 20.56 mm
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Key Features
- RDS(on) = 3.6mΩ ID = 210A