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* RDS(on) = 3.6mΩ ID = 210A† Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the las.

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* HEXFET® Power MOSFET D Electric Power Steering 14 Volts Automotive Electrical Systems Advanced Process Tec.

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tempera.

IRF220

IRF2204L

IRF2204PBF

IRF2204S

IRF221

IRF222

IRF223

IRF224

IRF225

IRF200

IRF200B211

IRF200P222

IRF200P223