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International Rectifier Electronic Components Datasheet

IRF2204L Datasheet

Power MOSFET

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PD - 94502
AUTOMOTIVE MOSFET
IRF2204S
Typical Applications
Electric Power Steering
14 Volts Automotive Electrical Systems
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the lastest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features to this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications
and a wide variety of other applications.
IRF2204L
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 3.6m
ID = 170AV
S
D2Pak
IRF2204S
TO-262
IRF2204L
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
170V
120V
850
200
1.3
± 20
460
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
www.irf.com
1
07/01/02


International Rectifier Electronic Components Datasheet

IRF2204L Datasheet

Power MOSFET

No Preview Available !

IRF2204S/IRF2204L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance U
Min. Typ. Max.
40 ––– –––
––– 0.041 –––
––– 3.0 3.6
2.0 ––– 4.0
120 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– 130 200
––– 35 52
––– 39 59
––– 15 –––
––– 140 –––
––– 62 –––
––– 110 –––
––– 4.5 –––
––– 7.5 –––
––– 5890 –––
––– 1570 –––
––– 130 –––
––– 8000 –––
––– 1370 –––
––– 2380 –––
Units
V
V/°C
m
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 130A T
VDS = 10V, ID = 250µA
VDS = 10V, ID = 130A
VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 130A
VDS = 32V
VGS = 10VT
VDD = 20V
ID = 130A
RG = 2.5
VGS = 10V T
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) Q
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 170V
––– ––– 850
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 130A, VGS = 0VT
––– 68 100 ns TJ = 25°C, IF = 130A
––– 120 180 nC di/dt = 100A/µsT
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com


Part Number IRF2204L
Description Power MOSFET
Maker International Rectifier
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IRF2204L Datasheet PDF






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