Datasheet4U Logo Datasheet4U.com

IRF2204L - Power MOSFET

Download the IRF2204L datasheet PDF. This datasheet also covers the IRF2204S variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • Dynamic dv/dt Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax G.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF2204S-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF2204 N-Channel MOSFET INCHANGE
IRF2204S N-Channel MOSFET INCHANGE
IRF220 N-Channel Power MOSFET Samsung semiconductor
IRF220 N-Channel Power MOSFET Intersil Corporation
IRF220 N-Channel Power MOSFET Fairchild Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF2204 AUTOMOTIVE MOSFET
IRF2204PBF Power MOSFET
IRF2204S Power MOSFET
IRF200B211 Power MOSFET
IRF230 N-CHANNEL TRANSISTORS

Full PDF Text Transcription

Click to expand full text
PD - 94502 AUTOMOTIVE MOSFET IRF2204S Typical Applications ● Electric Power Steering ● 14 Volts Automotive Electrical Systems Features ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax G Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Published: |