.T IA S tp 0 .0 1 Ω + - VD D A 300 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperatur.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest powe.

l HEXFET® Power MOSFET D IRF2807S IRF2807L VDSS = 75V RDS(on) = 13mΩ G S ID = 82A‡ Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This b.

IRF2807

IRF2807LPbF

IRF2807PbF

IRF2807S

IRF2807SPbF

IRF2807Z

IRF2807ZL

IRF2807ZLPBF

IRF2807ZPBF

IRF2807ZS

IRF2807ZSPBF

IRF2804

IRF2804L