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IRF2807ZPBF - AUTOMOTIVE MOSFET

Download the IRF2807ZPBF datasheet PDF. This datasheet also covers the IRF2807ZLPBF variant, as both devices belong to the same automotive mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF2807ZLPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF2807Z N-Channel MOSFET INCHANGE
IRF2807ZL N-Channel MOSFET INCHANGE
IRF2807ZS N-Channel MOSFET INCHANGE
IRF2807 N-Channel MOSFET INCHANGE
IRF2807L N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF2807Z AUTOMOTIVE MOSFET
IRF2807ZL AUTOMOTIVE MOSFET
IRF2807ZLPBF AUTOMOTIVE MOSFET
IRF2807ZS AUTOMOTIVE MOSFET
IRF2807ZSPBF AUTOMOTIVE MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. PD - 95488A IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF HEXFET® Power MOSFET D VDSS = 75V RDS(on) = 9.
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