Datasheet Summary
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
- 95488A
IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF
HEXFET® Power MOSFET
VDSS = 75V
RDS(on) =...
