IRF2903ZLPBF mosfet equivalent, power mosfet.
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description .
IRF2903ZSPbF IRF2903ZLPbF
HEXFET® Power MOSFET
D
VDSS = 30V
G
RDS(on) = 2.4mΩ
S
ID = 75A
D
D
S D G
D2Pak
S D G.
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.
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