l l l l l l IRF2903ZPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allow.

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperat.

IRF2903Z

IRF2903ZL

IRF2903ZLPBF

IRF2903ZS

IRF2903ZSPBF

IRF2907LPbF

IRF2907SLPbF

IRF2907Z

IRF2907ZL

IRF2907ZLPbF

IRF2907ZPbF

IRF2907ZS

IRF2907ZS-7PPbF