IRF3610SPBF

The IRF3610SPBF is HEXFET Power MOSFET designed by International Rectifier.

Product Overview

International Rectifier

Part number	IRF3610SPBF
Manufacturer	International Rectifier
File Size	293.44 KB
Description	HEXFET Power MOSFET
Datasheet	IRF3610SPBF-InternationalRectifier.pdf
Additional preview pages of the IRF3610SPBF datasheet.

PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 13, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 175 0 25 50 75 100 125 150 Starting T J , Junction Temperature.

📁 Similar Datasheet

Other Datasheets by International Rectifier

Published: Aug 9, 2014 |