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PD - 97056
IRF4000
HEXFET® Power MOSFET
Applications
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IEEE 802.3af Compliant PoE Switch in Power Sourcing Equipment
VDSS
100V
Features
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270m:@VGS = 12V 2.4A 350m:@VGS = 10V
' ' ' '
RDS(on) max
ID
Exceeds IEEE 802.3af PoE requirements Rugged planar technology with large SOA Very Low Leakage at 100V (1.5µA max) Fully characterized avalanche voltage and current Thermally enhanced Saves space: replaces 4 discrete MOSFETs
* 6 * 6 * 6 * 6
5mm x 10mm Power MLP
IRF4000 ISOMETRIC
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
100 ± 30 2.4 1.