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International Rectifier Electronic Components Datasheet

IRF40B207 Datasheet

Power MOSFET

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Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
StrongIRFET™
IRF40B207
HEXFET® Power MOSFET
D
VDSS
40V
RDS(on) typ.
3.6m
G
max
4.5m
S
ID
95A
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free*
RoHS Compliant, Halogen-Free
G
Gate
GDS
TO-220AB
IRF40B207
D
Drain
S
Source
Base part number
IRF40B207
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRF40B207
15
ID = 57A
12
9
TJ = 125°C
6
3
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2015 International Rectifier
100
80
60
40
20
0
25
50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
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April 1, 2015


International Rectifier Electronic Components Datasheet

IRF40B207 Datasheet

Power MOSFET

No Preview Available !

IRF40B207
Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
Max.
95
67
380
83
0.56
± 20
TJ
Operating Junction and
-55 to + 175
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy 
EAS (Thermally limited) Single Pulse Avalanche Energy 
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
RJC
Junction-to-Case 
RCS
Case-to-Sink, Flat Greased Surface
RJA
Junction-to-Ambient
300
10 lbf·in (1.1 N·m)
85
167
See Fig 15, 16, 23a, 23b
Typ.
–––
0.50
–––
Max.
1.8
–––
62
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Gate Resistance
Min.
40
–––
–––
–––
2.2
–––
–––
–––
–––
–––
Typ.
–––
0.039
3.6
5.4
3.0
–––
–––
–––
–––
2.0
Max.
–––
–––
4.5
–––
3.9
1.0
150
100
-100
–––
Units
V
V/°C
m
V
µA
nA

Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 57A
VGS = 6.0V, ID = 29A
VDS = VGS, ID = 50µA
VDS =40 V, VGS = 0V
VDS =40V,VGS = 0V,TJ =125°C
VGS = 20V
VGS = -20V
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.052mH, RG = 50, IAS = 57A, VGS =10V.
ISD 57A, di/dt 860A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
Ris measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 18A, VGS =10V.
2 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
April 1, 2015


Part Number IRF40B207
Description Power MOSFET
Maker International Rectifier
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