datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




International Rectifier Electronic Components Datasheet

IRF4104 Datasheet

Power MOSFET

No Preview Available !

IRF4104 pdf
PD - 94639A
AUTOMOTIVE MOSFET
IRF4104
IRF4104S
IRF4104L
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
Absolute Maximum Ratings
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 5.5m
G
ID = 75A
S
TO-220AB
IRF4104
D2Pak
IRF4104S
TO-262
IRF4104L
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
120
84
75
470
140
Units
A
W
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
0.95
± 20
120
220
See Fig.12a, 12b, 15, 16
-55 to + 175
W/°C
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm from case )
y y10 lbf in (1.1N m)
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
iCase-to-Sink, Flat Greased Surface
iJunction-to-Ambient
jJunction-to-Ambient (PCB Mount)
Typ.
–––
0.50
–––
–––
Max.
1.05
–––
62
40
Units
°C/W
www.irf.com
1
8/29/03


International Rectifier Electronic Components Datasheet

IRF4104 Datasheet

Power MOSFET

No Preview Available !

IRF4104 pdf
IRF4104S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
40 ––– –––
––– 0.032 –––
––– 4.3 5.5
V VGS = 0V, ID = 250µA
eV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 75A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance
63 ––– ––– V VDS = 10V, ID = 75A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 40V, VGS = 0V
––– ––– 250
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg Total Gate Charge
––– 68 100
ID = 75A
Qgs Gate-to-Source Charge
––– 21 ––– nC VDS = 32V
eQgd
Gate-to-Drain ("Miller") Charge
––– 27 –––
VGS = 10V
td(on)
Turn-On Delay Time
––– 16 –––
VDD = 20V
tr Rise Time
––– 130 –––
ID = 75A
td(off)
tf
Turn-Off Delay Time
Fall Time
e––– 38 ––– ns RG = 6.8
––– 77 –––
VGS = 10V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 3000 –––
––– 660 –––
––– 380 –––
––– 2160 –––
––– 560 –––
––– 850 –––
and center of die contact
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 75
MOSFET symbol
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 470
A showing the
integral reverse
––– ––– 1.3
––– 23 35
––– 6.8 10
ep-n junction diode.
V TJ = 25°C, IS = 75A, VGS = 0V
ens TJ = 25°C, IF = 75A, VDD = 20V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com


Part Number IRF4104
Description Power MOSFET
Maker International Rectifier
Total Page 12 Pages
PDF Download
IRF4104 pdf
IRF4104 Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 IRF4104 Power MOSFET International Rectifier
International Rectifier
IRF4104 pdf
2 IRF4104 N-Channel 40-V (D-S) MOSFET Freescale
Freescale
IRF4104 pdf
3 IRF4104L Power MOSFET International Rectifier
International Rectifier
IRF4104L pdf
4 IRF4104LPbF AUTOMOTIVE MOSFET International Rectifier
International Rectifier
IRF4104LPbF pdf
5 IRF4104PbF AUTOMOTIVE MOSFET International Rectifier
International Rectifier
IRF4104PbF pdf
6 IRF4104S Power MOSFET International Rectifier
International Rectifier
IRF4104S pdf
7 IRF4104SPbF AUTOMOTIVE MOSFET International Rectifier
International Rectifier
IRF4104SPbF pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy