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IRF5810PbF - Power MOSFET

General Description

These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF5810 Power MOSFET
IRF5800 Power MOSFET
IRF5800PBF Power MOSFET
IRF5801 Power MOSFET
IRF5801PbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5810 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability.