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IRF5851PbF - Power MOSFET

General Description

These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

Key Features

  • n Diode Forward Voltage www. irf. com -ID , Drain Current (A) 100.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF5851 Power MOSFET
IRF5850 Power MOSFET
IRF5852 Power MOSFET
IRF5852PbF Power MOSFET
IRF5800 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free PD-95341A IRF5851PbF HEXFET® Power MOSFET *  6   '  6 VDSS N-Ch 20V P-Ch -20V *   ' RDS(on) 0.090Ω 0.135Ω Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required.