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International Rectifier Electronic Components Datasheet

IRF6201PBF Datasheet

Power MOSFET

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PD - 97500A
IRF6201PbF
VDS
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
Qg (typical)
ID
(@TA = 25°C)
20 V
2.45 m
2.75 m
130 nC
27 A
Applications
OR-ing or hot-swap MOSFET
Battery operated DC motor inverter MOSFET
System/Load switch
6
6
6
*
Features and Benefits
Features
Low RDSon (2.45m@ Vgs = 4.5V)
Industry-standard SO-8 package
RoHS compliant containing no lead, no bromide and no halogen
HEXFET® Power MOSFET
'
'
'
'
SO-8
Benefits
results in
Lower conduction losses
Multi-vendor compatibility
Environmentally Friendly
Orderable part number
IRF6201PbF
IRF6201TRPbF
Package Type
SO8
SO8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS @ 4.5V
cPulsed Drain Current
ePower Dissipation
ePower Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
www.irf.com
Max.
20
±12
27
22
110
2.5
1.6
0.02
-55 to + 150
Note
Units
V
A
W
W/°C
°C
1
11/11/2010
Free Datasheet http://www.Datasheet4U.com


International Rectifier Electronic Components Datasheet

IRF6201PBF Datasheet

Power MOSFET

No Preview Available !

IRF6201PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
20
–––
–––
–––
VGS(th)
Gate Threshold Voltage
0.5
IDSS Drain-to-Source Leakage Current
–––
–––
IGSS Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Min.
IS Continuous Source Current
(Body Diode)
–––
ÙISM Pulsed Source Current
(Body Diode)
–––
VSD Diode Forward Voltage
–––
trr Reverse Recovery Time
–––
Qrr Reverse Recovery Charge
Thermal Resistance
–––
Parameter
fRθJL Junction-to-Drain Lead
eRθJA Junction-to-Ambient
Typ.
–––
4.6
1.90
2.10
–––
–––
–––
–––
–––
130
16
60
29
100
320
265
8555
1735
1290
Typ.
–––
–––
–––
82
180
Max.
–––
–––
2.45
2.75
1.1
1.0
150
100
-100
195
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
ddm
VGS = 4.5V, ID = 27A
VGS = 2.5V, ID = 22A
V VDS = VGS, ID = 100µA
µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
nA
VGS = 12V
VGS = -12V
VGS = 4.5V
nC VDS = 10V
ID = 22A
VDD = 20V, VGS = 4.5V
ns
ID = 1.0A
RG = 6.8
See Figs. 10a & 10b
VGS = 0V
pF VDS = 16V
ƒ = 1.0MHz
Max.
2.5
110
1.2
120
270
Units
Conditions
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
dV TJ = 25°C, IS = 2.5A, VGS = 0V
dns TJ = 25°C, IF = 2.5A, VDD = 16V
nC di/dt = 100/µs
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width 400µs; duty cycle 2%.
ƒ When mounted on 1 inch square copper board.
„ Rθ is measured at TJ approximately 90°C.
2
Free Datasheet http://www.Datasheet4U.com


Part Number IRF6201PBF
Description Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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