Description
The IRF6610 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
- ypical Source-Drain Diode Forward Voltage
70 60
ID, Drain Current (A)
Typical VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
2.5
50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C)
2.0 ID = 250µA
1.5
1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
60
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID TOP
50 40 30 20 10 0 25 50 75
3.6.
IRF6610_InternationalRectifier.pdf
