IRF6614 DirectFET Power MOSFET

International Rectifier

Description

PD -96907A www.DataSheet4U.com IRF6614 DirectFET Power MOSFET l l l l l l l l l l Application Specific MOSFETs VDSS VGS RDS(on) RDS(on) Lead and.
The IRF6614 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resista.

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Datasheet Specifications

Part number: IRF6614
Manufacturer: International Rectifier
File Size: 281.81 KB
Datasheet: IRF6614_InternationalRectifier.pdf
Description: DirectFET Power MOSFET

Features

* .00 10.00 100.00 10.0 TJ = 150°C TJ = 25°C TJ = -40°C 1.0 1msec 10msec VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 2.2 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 2.5 Fig11. Maximum Safe Operating Area 50 VGS(th) Gate threshol

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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IRF6614 DirectFET Power MOSFET International Rectifier

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