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International Rectifier Electronic Components Datasheet

IRF6614 Datasheet

DirectFET Power MOSFET

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PD -96907A
IRF6614www.DataSheet4U.com
DirectFET™ Power MOSFET ‚
l Application Specific MOSFETs
l Lead and Bromide Free 
l Low Profile (<0.7 mm)
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
40V max ±20V max 5.9m@ 10V 7.1m@ 4.5V
l Dual Sided Cooling Compatible 
Qg tot
l Ultra Low Package Inductance
19nC
l Optimized for High Frequency Switching above 1MHz 
Qgd
6.0nC
Qgs2
1.4nC
Qrr
5.5nC
Qoss Vgs(th)
9.5nC 1.8V
l Ideal for CPU Core and Telecom Synchronous
Rectification in DC-DC Converters
l Optimized for Control FET socket of Sync. Buck Converter
l Low Conduction Losses
l Compatible with existing Surface Mount Techniques 
ST DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
Description
The IRF6614 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal
resistance by 80%.
The IRF6614 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest genera-
tion of processors operating at higher frequencies. The IRF6614 has been optimized for parameters that are critical in synchronous
buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
40 V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
20
16
Gate-to-Source Voltage
hContinuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
kContinuous Drain Current, VGS @ 10V
ePulsed Drain Current
fSingle Pulse Avalanche Energy
ÃeAvalanche Current
ID = 12.7A
12
10 ID= 10.2A
8
±20
12.7
10.1
55
102
22
10.2
VDS= 32V
VDS= 20V
A
mJ
A
12 TJ = 125°C 6
8 TJ = 25°C
4
2
4
2.0 4.0 6.0 8.0 10.0
VGS, Gate-to-Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance Vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET MOSFETs
ƒ Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com
0
0 10 20 30 40 50
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ Starting TJ = 25°C, L = 0.43mH, RG = 25, IAS = 10.2A.
† Surface mounted on 1 in. square Cu board, steady state.
‰ TC measured with thermocouple mounted to top (Drain) of part.
1
11/8/04


International Rectifier Electronic Components Datasheet

IRF6614 Datasheet

DirectFET Power MOSFET

No Preview Available !

IRF6614
www.DataSheet4U.com
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
40
–––
–––
VGS(th)
VGS(th)/TJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
71
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
–––
(Body Diode) e
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
38
5.9
7.1
1.80
-5.5
–––
–––
–––
–––
–––
19
5.9
1.4
6.0
5.7
7.4
9.5
1.0
13
27
18
3.6
2560
370
200
Typ.
–––
–––
–––
15
5.5
Max. Units
Conditions
–––
–––
8.3
9.9
2.25
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 12.7A g
VGS = 4.5V, ID = 10.2A g
V VDS = VGS, ID = 250µA
–––
1.0
150
100
-100
–––
mV/°C
µA VDS = 32V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 10.2A
29
––– VDS = 20V
––– nC VGS = 4.5V
––– ID = 10.2A
––– See Fig. 17
–––
––– nC VDS = 16V, VGS = 0V
1.5
––– VDD = 20V, VGS = 4.5V g
––– ID = 10.2A
––– ns Clamped Inductive Load
–––
––– VGS = 0V
––– pF VDS = 20V
––– ƒ = 1.0MHz
Max. Units
Conditions
2.6 MOSFET symbol
A showing the
102 integral reverse
p-n junction diode.
1.0 V TJ = 25°C, IS = 10.2A, VGS = 0V g
23 ns TJ = 25°C, IF = 10.2A
8.3 nC di/dt = 100A/µs g
Notes:
ƒ Repetitive rating; pulse width limited by max. junction temperature.
… Pulse width 400µs; duty cycle 2%.
2
www.irf.com


Part Number IRF6614
Description DirectFET Power MOSFET
Maker International Rectifier
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IRF6614 Datasheet PDF





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