Datasheet Details
| Part number | IRF6618TR1 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 234.57 KB |
| Description | HEXFET Power MOSFET |
| Download | IRF6618TR1 Download (PDF) |
|
|
Download the IRF6618TR1 datasheet PDF. This datasheet also includes the IRF6618 variant, as both parts are published together in a single manufacturer document.
| Part number | IRF6618TR1 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 234.57 KB |
| Description | HEXFET Power MOSFET |
| Download | IRF6618TR1 Download (PDF) |
|
|
|
The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
PD - 94726D IRF6618/IRF6618TR1 HEXFET® Power MOSFET l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques Applicable DirectFET Package/Layout Pad (see p.8,9 for details) VDSS 30V RDS(on) max 2.2mΩ@VGS = 10V 3.4mΩ@VGS = 4.
| Part Number | Description |
|---|---|
| IRF6618TRPbF | Power MOSFET |
| IRF6618 | HEXFET Power MOSFET |
| IRF6618PbF | Power MOSFET |
| IRF6610 | HEXFET Power MOSFET Silicon Technology |
| IRF6611 | DirectFET Power MOSFET |
| IRF6611PbF | DirectFET Power MOSFET |
| IRF6611TRPbF | DirectFET Power MOSFET |
| IRF6612 | HEXFET Power MOSFET |
| IRF6612PbF | MOSFET |
| IRF6612TR1 | HEXFET Power MOSFET |