IRF6619PbF Datasheet - International Rectifier

DirectFET Power MOSFET

IRF6619PbF Features

* = 25°C TJ = -40°C 100 10.0 10 1msec 10msec 1.0 VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 VSD , Source-to-Drain Voltage (V) 1 TA = 25°C Tj = 150°C Single Pulse 0.01 0.10 1.00 10.00 100.00 0.1 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 180 VGS(th) Gate thresho

IRF6619PbF General Description

The IRF6619PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries use.

IRF6619PbF Datasheet (314.09 KB)

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IRF6619PbF

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International Rectifier

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Directfet power mosfet.
IRF6619PbF IRF6619TRPbF www.DataSheet4U.com PD - 97084 DirectFET Power MOSFET Typical values (unless otherwise specified) RoHS Compliant l Lea.

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IRF6619PbF DirectFET Power MOSFET International Rectifier

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IRF6619PbF Features

IRF6619PbF General Description

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