IRF6621PbF Datasheet - International Rectifier

Power MOSFET

IRF6621PbF Features

* 0.1 1.0 10.0 100.0 VDS, Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area 2.5 Typical VGS(th) Gate threshold Voltage (V) ID, Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 50 40 2.0 ID = 250µA 30 20 1.5 10 0 25 50 75 100 125 150 TC, Case Temperature (°C) Fig 12.

IRF6621PbF General Description

The IRF6621PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries .

IRF6621PbF Datasheet (252.22 KB)

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IRF6621PbF

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International Rectifier

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252.22 KB

Description:

Power mosfet.
PD - 97093 IRF6621PbF IRF6621TRPbF DirectFET Power MOSFET l RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific M.

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IRF6621PbF Power MOSFET International Rectifier

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IRF6621PbF Features

IRF6621PbF General Description

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