IRF6626TRPbF Datasheet - International Rectifier

DirectFET Power MOSFET

IRF6626TRPbF Features

* (on) 100µsec 10 1msec 10msec 1 0.1 Ta = 25°C Tj = 150°C Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 ID = 50µA 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 13. Threshol

IRF6626TRPbF General Description

The IRF6626PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries .

IRF6626TRPbF Datasheet (272.50 KB)

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Part number:

IRF6626TRPbF

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International Rectifier

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272.50 KB

Description:

Directfet power mosfet.
PD - 97218 IRF6626PbF IRF6626TRPbF l RoHs Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core.

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IRF6626TRPbF DirectFET Power MOSFET International Rectifier

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IRF6626TRPbF Features

IRF6626TRPbF General Description

Datasheet Details

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