Description
The IRF6629PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.
Features
- orward Voltage
200 180 160
ID, Drain Current (A)
3.0
Typical VGS(th) Gate threshold Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
2.5
140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C)
2.0
1.5
ID = 100µA ID = 250µA
1.0
ID = 1.0mA ID = 1.0A
0.5 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
5000
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical Thre.
IRF6629PBF_InternationalRectifier.pdf
