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IRF6629PBF Datasheet - International Rectifier

DirectFET Power MOSFET

IRF6629PBF Features

* orward Voltage 200 180 160 ID, Drain Current (A) 3.0 Typical VGS(th) Gate threshold Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 1.5 ID = 100µA ID = 250µA 1.0 ID = 1.0mA ID

IRF6629PBF General Description

The IRF6629PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used.

IRF6629PBF Datasheet (299.19 KB)

Preview of IRF6629PBF PDF

Datasheet Details

Part number:

IRF6629PBF

Manufacturer:

International Rectifier

File Size:

299.19 KB

Description:

Directfet power mosfet.
PD - 97235 www.DataSheet4U.com l l l l l l l l l IRF6629PbF IRF6629TRPbF DirectFET™ Power MOSFET ‚ RoHs Compliant  Typical values (unless otherwis.

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IRF6629PBF DirectFET Power MOSFET International Rectifier

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