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IRF6629TRPBF Datasheet DirectFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Download the IRF6629TRPBF datasheet PDF. This datasheet also includes the IRF6629PBF variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IRF6629PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

General Description

The IRF6629PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.

The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Overview

PD - 97235 www.DataSheet4U.com l l l l l l l l l IRF6629PbF IRF6629TRPbF DirectFET™ Power MOSFET ‚ RoHs Compliant  Typical values (unless otherwise specified) Lead-Free (Qualified up to 260°C Reflow) VDSS VGS RDS(on) RDS(on) Application Specific MOSFETs 25V max ±20V max 1.6mΩ@ 10V 2.1mΩ@ 4.5V Ideal for CPU Core DC-DC Converters Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Low Conduction Losses 34nC 11nC 4.2nC 27nC 23nC 1.8V High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  MX Applicable DirectFET Outline and Substrate Outline (see p.

Key Features

  • orward Voltage 200 180 160 ID, Drain Current (A) 3.0 Typical VGS(th) Gate threshold Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 1.5 ID = 100µA ID = 250µA 1.0 ID = 1.0mA ID = 1.0A 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 5000 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Thre.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRF6629PBF DirectFET Power MOSFET
IRF6620 HEXFETPower MOSFET
IRF6620PBF Power MOSFET
IRF6620TRPBF Power MOSFET
IRF6621 Power MOSFET
IRF6621PbF Power MOSFET
IRF6621TRPbF Power MOSFET
IRF6622 DirectFET Power MOSFET
IRF6622PBF DirectFET Power MOSFET
IRF6622TRPBF DirectFET Power MOSFET