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IRF6633APbF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: l RoHS pliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling patible  l patible with existing Surface Mount Techniques  PD - 97122A IRF6633APbF IRF6633ATRPbF DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 20V max ±20V max 4.1mΩ@ 10V 7.0mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 11nC 3.9nC 1.7nC 33nC 8.5nC 1.8V MU DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.

General Description

The IRF6633APbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile.

The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Key Features

  • 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 240 200 160 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temperature ( °C ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 1.45A 1.8A BOTTOM 13A 120 80 40 www. irf. com 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig 14. Maximum Avalanche Energy Vs. Drain Current 5 IRF6633APbF L VCC DUT 0 1K Vds Vgs(th) Id Vgs Fig 15a. Gate Charge Test C.

More Datasheets from International Rectifier (now Infineon)

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IRF6633APbF Distributor