IRF6662PBF Datasheet - International Rectifier

Power MOSFET

IRF6662PBF Features

* e-Drain Diode Forward Voltage 10 Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 7.0 ID = 100µA ID = 250µA 8 ID, Drain Current (A) 6.0 ID = 1.0mA ID = 1.0A 6 5.0 4 4.0 2 3.0 0 25 50 75 100 125 150 T A , Ambient Temperature (°C) 2.0 -75 -50 -25 0 25 50 75 100

IRF6662PBF General Description

The IRF6662PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

IRF6662PBF Datasheet (271.77 KB)

IRF6662PBF Datasheet Preview — Preview of IRF6662PBF PDF

Datasheet Details

Part number:

IRF6662PBF

Manufacturer:

International Rectifier

File Size:

271.77 KB

Description:

Power mosfet.
PD - 97243A DirectFET™ Power MOSFET RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for High Performance I.

📁 Related Datasheet

IRF6662PbF Power MOSFET (IRF)

IRF6662 DirectFet Power MOSFET (International Rectifier)

IRF6662TRPbF Power MOSFET (IRF)

IRF6662TRPBF Power MOSFET (International Rectifier)

IRF6665 DIGITAL AUDIO MOSFET (International Rectifier)

IRF6665PbF Digital Audio MOSFET (International Rectifier)

IRF6665TRPbF Digital Audio MOSFET (International Rectifier)

IRF6668 DirectFet Power MOSFET (International Rectifier)

IRF6668PBF DirectFET Power MOSFET (International Rectifier)

IRF6668TRPBF DirectFET Power MOSFET (International Rectifier)

TAGS

IRF6662PBF Power MOSFET International Rectifier

Image Gallery

IRF6662PBF Features

IRF6662PBF General Description

Datasheet Details

File Size:

Description:

IRF6662PBF Distributor