Description
The IRF6662PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Features
- e-Drain Diode Forward Voltage
10
Typical VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
7.0 ID = 100µA ID = 250µA
8
ID, Drain Current (A)
6.0
ID = 1.0mA ID = 1.0A
6
5.0
4
4.0
2
3.0
0 25 50 75 100 125 150 T A , Ambient Temperature (°C)
2.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Ambient Temperature
160
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID 1.6.
IRF6662PBF-InternationalRectifier.pdf
