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IRF6710S2TR1PbF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 97124D IRF6710S2TRPbF IRF6710S2TR1PbF l RoHS pliant Containing No Lead and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling patible   DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters 25V max ±20V max 4.5mΩ@ 10V 9.0mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for Control FET Application l patible with existing Surface Mount Techniques  8.8nC 3.0nC 1.3nC 8.0nC 4.4nC 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The IRF6710S2TRPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Key Features

  • d Voltage (V) 30 2.5 ID, Drain Current (A) 20 2.0 ID = 1.0A ID = 1.0mA ID = 250µA 10 1.5 ID = 25µA EAS, Single Pulse Avalanche Energy (mJ) 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 700 TJ = 175°C 600 500 400 TJ = 25°C 300 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) Fig 13. Typical Threshold Voltage vs. Junction Temperature 100 ID TOP 1.8A 80 3.8A BOTTOM 10A 60 40 Gfs, Forward Transconductance (S) 200 1.

More Datasheets from International Rectifier (now Infineon)

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