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IRF6714MTRPbF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Download the IRF6714MTRPbF datasheet PDF. This datasheet also includes the IRF6714MPbF variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IRF6714MPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

General Description

The IRF6714MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.

The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Overview

PD - 96130A IRF6714MPbF IRF6714MTRPbF DirectFET™ Power MOSFET ‚ l RoHs Compliant and Halogen Free  l Low Profile (<0.6 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 1.6mΩ@ 10V 2.6mΩ@ 4.5V l Optimized for High Frequency Switching  Qg tot l Ideal for CPU Core DC-DC Converters l Optimized for Sync.

FET socket of Sync.

Buck Converter 29nC Qgd 8.3nC Qgs2 4.1nC Qrr 36nC Qoss 23nC Vgs(th) 1.9V l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested MX DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.

Key Features

  • Fig11. MVDaxSi,mDuramin-tSo-aSfoeuOrcepeVroaltatigneg(VA) rea ID, Drain Current (A) EAS , Single Pulse Avalanche Energy (mJ) 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 800 700 600 500 Typical VGS(th) Gate threshold Voltage (V) 3.5 3.0 2.5 2.0 ID = 100µA 1.5 ID = 250µA ID = 1.0mA 1.0 ID = 1.0A 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 13. Typical Threshold Voltage vs. Junction Te.

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