power mosfet.
Fig 4. Typical Output Characteristics
1000
ID, Drain-to-Source Current(A)
100
TJ = 150°C TJ = 25°C 10 TJ = -40°C
1
VDS = 15V ≤60µs PULSE WIDTH 0.1 1.5 2.0 2.5 3.0 3.5.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is follo.
The IRF6794MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package.
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