) 1 2.5V 0.1 0.1 1 ≤60µs PULSE WIDTH Tj = 25°C 10 100 VDS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 100 VDS = 15V ≤60µs PULSE WIDTH .

PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is follo.

The IRF6797MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET packag.

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