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IRF7205PBF Datasheet HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

General Description

l HEXFET® Power MOSFET S 1 2 3 4 8 7 A D D D D S S G VDSS = -30V RDS(on) = 0.070Ω ID = -4.6A 6 5 Top View Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications.

Overview

PD - 95021 IRF7205PbF Adavanced Process Technology l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l.