Datasheet Details
| Part number | IRF7241PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 167.09 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF7241PbF Datasheet
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| Part number | IRF7241PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 167.09 KB |
| Description | Power MOSFET |
| Datasheet |
IRF7241PbF Datasheet
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S1 8 A D New trench HEXFET® Power MOSFETs from S 2 International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance S 3 7D 6D per silicon area.
This benefit, combined with the ruggedized device design that HEXFET power G 4 5D MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use Top View in battery and load management applications.
SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor VGS TJ, TSTG Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance Symbol RθJL RθJA www.irf.com Parameter Junction-to-Drain Lead Junction-to-Ambient Max.
● Trench Technology ● Ultra Low On-Resistance ● P-Channel MOSFET ● Available in Tape & Reel ● Lead-Free VDSS -40V PD - 95294 IRF7241PbF HEXFET® Power MOSFET RDS(on) max (mW) 41@VGS = -10V 70@VGS = -4.5V ID -6.2A -5.
| Part Number | Description |
|---|---|
| IRF7241 | HEXFET Power MOSFET |
| IRF7240 | Power MOSFET |
| IRF7240PBF | HEXFET Power MOSFET |
| IRF720 | N-Channel Power MOSFET |
| IRF7201 | HEXFET Power MOSFET |
| IRF7201PBF | Power MOSFET |
| IRF7202 | Power MOSFET |
| IRF7203 | Power MOSFET |
| IRF7204 | Power MOSFET |
| IRF7204PBF | Power MOSFET |