Datasheet Details
| Part number | IRF7704PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 242.04 KB |
| Description | Power MOSFET |
| Datasheet | IRF7704PbF-InternationalRectifier.pdf |
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Overview: l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.1mm) l Available in Tape & Reel l Lead-Free VDSS -40V PD- 96025A IRF7704PbF HEXFET® Power MOSFET RDS(on) max (mW) 46@VGS = -10V 74@VGS = -4.5V ID -4.6A -3.
| Part number | IRF7704PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 242.04 KB |
| Description | Power MOSFET |
| Datasheet | IRF7704PbF-InternationalRectifier.pdf |
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HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, bined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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