IRF7752GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
30 ––– –––
––– 0.030 –––
––– ––– 0.030
––– 0.036
0.60 ––– 2.0
12 ––– –––
––– ––– 20
––– ––– 100
V
V/°C
Ω
V
S
µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 4.6A
VGS = 4.5V, ID = 3.9A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 4.6A
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Qg
Qgs
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
––– ––– -200
––– ––– 200
nA
VGS = -12V
VGS = 12V
––– 9.0 –––
ID = 4.6A
––– 2.5 ––– nC VDS = 24V
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 2.6 –––
––– 7.2 –––
VGS = 4.5V
VDD = 15V
tr
td(off)
tf
Ciss
Coss
Crss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 9.1 –––
––– 25 –––
––– 11 –––
––– 861 –––
––– 210 –––
––– 25 –––
ns
ID = 1.0A
RG = 6.0Ω
VGS = 10V
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
Typ.
–––
25
23
Max. Units
0.91
37
A
1.3 V
––– ns
––– nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 0.91A, VGS = 0V
TJ = 25°C, IF = 0.91A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
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