Datasheet4U Logo Datasheet4U.com

IRF7752GPBF - Power MOSFET

General Description

HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

' !

Key Features

  • t us at www. irf. com for sales contact information.05/2008 8 www. irf. com www. DataSheet. in.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF7704TRPBF Dual P-Channel MOSFET VBsemi
IRF7769L1 Power MOSFET Infineon
IRF7769L1TRPbF Power MOSFET Infineon
IRF710 N-Channel Power MOSFET Intersil Corporation
IRF710 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7752 Power MOSFET
IRF7750 Power MOSFET
IRF7750GPBF Power MOSFET
IRF7750PbF Power MOSFET
IRF7751 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD- 96151 IRF7752GPbF l l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.1mm) Available in Tape & Reel Lead-Free Halogen-Free HEXFET® Power MOSFET VDSS 30V RDS(on) max 0.030@VGS = 10V 0.036@VGS = 4.5V ID 4.6A 3.9A Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner ' ! " # Ã2Ã9 !Ã2ÃT "Ã2ÃT #Ã2ÃB & % $ 'Ã2Ã9! &Ã2ÃT! %Ã2ÃT! $Ã2ÃB! with an extremely efficient and reliable device for use in battery and load management. The TSSOP-8 package, has 45% less footprint area of the standard SO-8.