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International Rectifier Electronic Components Datasheet

IRF7752GPBF Datasheet

Power MOSFET

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l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.1mm)
l Available in Tape & Reel
l Lead-Free
l Halogen-Free
Description
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter-
national Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for use
in battery and load management.
The TSSOP-8 package, has 45% less footprint area of the
standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a
premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
PD- 96151
IRF7752GPbF
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
0.030@VGS = 10V
0.036@VGS = 4.5V
ID
4.6A
3.9A
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TSSOP-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
30
4.6
3.7
37
1.0
0.64
8.0
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
125
Units
°C/W
1
05/12/08
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International Rectifier Electronic Components Datasheet

IRF7752GPBF Datasheet

Power MOSFET

No Preview Available !

IRF7752GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
30 ––– –––
––– 0.030 –––
––– ––– 0.030
––– ––– 0.036
0.60 ––– 2.0
12 ––– –––
––– ––– 20
––– ––– 100
V
V/°C
V
S
µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 4.6A ‚
VGS = 4.5V, ID = 3.9A ‚
VDS = VGS, ID = 250µA
VDS = 10V, ID = 4.6A
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Qg
Qgs
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
––– ––– -200
––– ––– 200
nA
VGS = -12V
VGS = 12V
––– 9.0 –––
ID = 4.6A
––– 2.5 ––– nC VDS = 24V
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 2.6 –––
––– 7.2 –––
VGS = 4.5V‚
VDD = 15V
tr
td(off)
tf
Ciss
Coss
Crss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 9.1 –––
––– 25 –––
––– 11 –––
––– 861 –––
––– 210 –––
––– 25 –––
ns
ID = 1.0A
RG = 6.0
VGS = 10V‚
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
25
23
Max. Units
0.91
37
A
1.3 V
––– ns
––– nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 0.91A, VGS = 0V ‚
TJ = 25°C, IF = 0.91A
di/dt = 100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 300µs; duty cycle 2%.
ƒ When mounted on 1 inch square copper board, t<10 sec
2 www.irf.com
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Part Number IRF7752GPBF
Description Power MOSFET
Maker International Rectifier
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