IRF8010PBF - HEXFET Power MOSFET

Name: IRF8010PBF
SKU: IRF8010PBF-572720

International Rectifier

The IRF8010PBF by International Rectifier is a HEXFET Power MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	IRF8010PBF
Manufacturer	International Rectifier
File Size	156.44 KB
Description	HEXFET Power MOSFET
Datasheet	IRF8010PBF_InternationalRectifier.pdf
Additional preview pages of the IRF8010PBF datasheet.

h ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. Coss eff. is a fixed capacitance that gives the same charging time Starting TJ = 25°C, L = 0.31mH, RG = 25Ω, as Coss while VDS is rising from 0 to 80% VDSS. IAS = 45A. Calculated continuous current based on maximum allowable.
ISD ≤ 45A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, junction temperature. Package limitation current is 75A. TJ ≤ 175°C. TO-220 package is not recommended for Surface Mount.

📁 IRF8010PBF Similar Datasheet

IRF820 - N-Channel Power MOSFET (ART CHIP)
IRF820A - Power MOSFET (Vishay)
IRF820AL - Power MOSFET (Vishay)
IRF820AS - Power MOSFET (Vishay)
IRF820B - 500V N-Channel MOSFET (Fairchild Semiconductor)
IRF820FI - (IRF820 / IRF822) N-Channel Enhancement Mode Power MOS Transistors (STMicroelectronics)
IRF820L - Power MOSFET (Vishay)
IRF820S - Power MOSFET (Vishay)

Other Datasheets by International Rectifier

Published: Feb 22, 2007 |