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IRF8010SPBF - HEXFET Power MOSFET

Download the IRF8010SPBF datasheet PDF. This datasheet also covers the IRF8010LPBF variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • DE www. irf. com 9 IRF8010S/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF8010LPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF8010S N-Channel MOSFET INCHANGE
IRF8010 N-Channel MOSFET INCHANGE
IRF8010L N-Channel MOSFET INCHANGE
IRF820 N-Channel Power MOSFET ART CHIP
IRF820 N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF8010S SMPS MOSFET
IRF8010 HEXFET Power MOSFET
IRF8010L SMPS MOSFET
IRF8010LPBF HEXFET Power MOSFET
IRF8010PBF HEXFET Power MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com PD - 95433 SMPS MOSFET Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free IRF8010SPbF IRF8010LPbF HEXFET® Power MOSFET VDSS 100V RDS(on) max 15mΩ ID 80A‡ Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Typical RDS(on) = 12mΩ D2Pak IRF8010S TO-262 IRF8010L Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM Max. 80 57 320 260 1.
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