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IRF8513PBF Datasheet - International Rectifier

Power MOSFET

IRF8513PBF Features

* Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area Fig 12. Maximum Safe Operating Area 4 www.irf.com www.DataSheet4U.com Typical Characteristics Q1 - Control FET 2.0 ID = 8.0A VGS = 10V RDS(on) , Drain-to-Source On Resistance (Normalized) IRF8513

IRF8513PBF General Description

The IRF8513PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8513PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. Th.

IRF8513PBF Datasheet (375.30 KB)

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Datasheet Details

Part number:

IRF8513PBF

Manufacturer:

International Rectifier

File Size:

375.30 KB

Description:

Power mosfet.
PD - 96196 www.DataSheet4U.com IRF8513PbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Gr.

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IRF8513PBF Power MOSFET International Rectifier

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