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IRF8513PBF - Power MOSFET

Description

The IRF8513PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package.

The IRF8513PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses.

Features

  • Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area Fig 12. Maximum Safe Operating Area 4 www. irf. com www. DataSheet4U. com Typical Characteristics Q1 - Control FET 2.0 ID = 8.0A VGS = 10V RDS(on) , Drain-to-Source On Resistance (Normalized) IRF8513PbF Q2 - Synchronous FET ID = 11A VGS = 10V 1.5 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) 1.5 1.0 1.0 0.5 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (°C).

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Full PDF Text Transcription

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PD - 96196 www.DataSheet4U.com IRF8513PbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Benefits l Low Gate Charge and Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% Tested for RG l Lead-Free (Qualified to 260°C Reflow) l RoHS Compliant (Halogen Free) V DSS 30V R DS(on) max Q1 15.5m @VGS = 10V Q2 12.7m @VGS = 10V : : ID 8.0A 11A B      9 T ÃÃ9! T ÃÃ9! T ÃÃ9! SO-8 T!  T!  B!  Description The IRF8513PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package.
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