IRF8513PBF - Power MOSFET

International Rectifier

Datasheet Details

Part number	IRF8513PBF
Manufacturer	International Rectifier ↗
File Size	375.30 KB
Description	Power MOSFET
Datasheet	IRF8513PBF_InternationalRectifier.pdf

The IRF8513PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package.

Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area Fig 12. Maximum Safe Operating Area 4 www. irf. com www. DataSheet4U. com Typical Characteristics Q1 - Control FET 2.0 ID = 8.0A VGS = 10V RDS(on) , Drain-to-Source On Resistance (Normalized) IRF8513PbF Q2 - Synchronous FET ID = 11A VGS = 10V 1.5 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) 1.5 1.0 1.0 0.5 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (°C).

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Published: Jun 22, 2009 |